Graphene Base Hot Electron Transistors Enhanced by Double Filter Barrier In GHz Range Operation

Liang Bor Wei^1*, Chang Wen-Hao², Yann-Wen Lan³

¹Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan
²Department of Physics, National Taiwan University, Taipei, Taiwan
³Department of Physics, National Taiwan Normal University, Taipei, Taiwan

* Presenter:Liang Bor Wei, email:charlie155155@hotmail.com

The radiofrequency devices of graphene and other two-dimensional materials are highly desirable. This is due to the diversity of one atom layers brought about electronic devices miniaturization and high-speed applications In this study, we demonstrate a vertical graphene-base hot electron transistor (GHET) that operates in the radiofrequency for the first time. Our device performs relatively high current density (~ 200 A/cm²), high common-base current gain (α* ~ 99.2%), and common-emitter current gain (β* ~ 2.7) at room temperature with current-gain cutoff frequency of 65 GHz. This proposed transistor design provides a scheme to overcome the limitation of communication application of extra fast RF tunneling hot-carrier electronics.

Keywords: graphene , hot electron transistor, RF tunneling hot-carrier electronics., two-dimensional materials