Investigation on resistive switching of β-Ga₂O₃ 2D-nanoleaf and 1D-nanowire structures

Chandrasekar Sivakumar^1,2*, Mon-Shu Ho^1,2

¹Department of Physics, National Chung Hsing University, Taichung, Taiwan
²Innovation and Development Center of Sustainable Agriculture (IDCSA), National Chung Hsing University, Taichung, Taiwan

* Presenter:Chandrasekar Sivakumar, email:chandruphysics1995@gmail.com

Abstract: One of the promising non-volatile memories of the next generation is Resistive Random-Access Memory (ReRAM). It has vast benefits compared to other non-volatile memories (e.g., DRAM, PCRAM, CBRAM, etc.). Dielectric films have been extensively studied by the scientific research community as a switching material over many decades and reported tons of advantages and downsides. This paper investigated the resistance switching phenomenon in 2D and 1D materials using directed electron flow and elucidated their local electron transport mechanism. The vapor-liquid-solid (VLS) growth technology is employed to produce high-density β-Ga₂O₃ 2D-nanoleaf and 1D-nanowires on Si (100) substrates. Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), and X-ray Diffraction (XRD) have analyzed the structural characteristics. In addition, the structure of elements and bonding features have been confirmed by the Elemental Dispersive Spectrum (SEM and TEM) and X-ray Photoelectron Spectroscopy (XPS), respectively. The resistance switching of a 2D nanoleaf and 1D nanowire ReRAM devices are comprehensively discussed. The 1D and 2D switching mechanisms are regulated through oxygen ion migration between electrodes through the formation and annihilation of conductive ion filaments.

Keywords: β-Ga2O3, nanoleaf, nanowire, VLS growth, Resistive memory