Research on Different Process Temperatures of HfZrO2-based Ferroelectric Random Access Memory
Yu-Hsuan Yeh1*, Yung-Fang Tan2, Ting-Chang Chang1
1Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan
2Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan
* Presenter:Yu-Hsuan Yeh,
 In this study, atomic layer deposition (ALD) process is used to fabricate the HfZrO2 ferroelectric thin film, expecting to reach lower process temperature to avoid electromigration caused by Cu. Further, the differences of the electrical characteristics measured by devices of different process temperatures are investigated. Lower process temperature devices need more cycles of wake up pulse to have ferroelectricity and have smaller permanent polarization, but the grain size is supposed to be larger causing less leakage current result in better reliability. Finally, mechanism models are proposed to explain the relationship between the electrical characteristics and the process temperature of the devices.

Keywords: FeRAM, HfZrO2, process temperature