Effect of V doping on its structural and electronic properties of 2D layered SnS2
Abhijeet Shelke1*, H. T. Wang1, K. H. Chen1, C. Y. Chang1, S. A. Teng1, J. Q. Fan1, W. X. Lin1, C. W. Li1, T. C. Wu1, J. C. Wang1, S. H. Hsieh2, H. M. Tsai2, C. W. Pao2, I. Shown3, A. Sabbah3, L. C. Chen3, K. H. Chen3,4, J. W. Chiou5, W. F. Pong1
1Physics, Tamkang University, Tamsui, New Taipei City, Taiwan
2National Synchrotron Radiation Research Center, Hsinchu, Taiwan
3Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
4Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
5Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan
* Presenter:Abhijeet Shelke, email:abhijeetshelke15@gmail.com
Effect of interstitial V doping into the two-dimensional SnS2 on its electronic structural properties using X-ray absorption spectroscopy, X-ray emission spectroscopy and valence band photoemission spectroscopy is studied in this work. The interesting pre-edge feature at V K-edge due to 1s → 3d forbidden transition and absorption edge feature due to 1s → 4p dipole allowed transition modifies themselves by hybridizing with S/Sn atoms to forms V – S/Sn interaction at the vdW gap. However, V doping also develops V 3d hybridization with S 3p to introduce new inter band state at top of the valence band forwarded by Sn 5s – S 3p hybridized state. At lower V-contain SnS2 samples, this inter band state is not observed because of absence of lone pair electron which gives the top of valence band solely due to S 3p state. Therefore. for higher V-contain samples, the position of Fermi energy level is close to the conduction band. Also, the broken symmetry ascribes the noticeable shift of inter band towards Fermi level at higher binding energy. Thus, induced inter band state can tune the band gap of V-doped SnS2 system into an appropriate value to exhibit its potential application in photocatalysis.

Keywords: Band Gap, Electronic Strcuture, 2D materials, Inter band state, Doping