Plasma enhanced chemical vapor deposition growth of graphene and boron nitride

Wei-Yen Woon^1*, Wei-Yu Huang¹, Syuan-Wei Lin¹

¹Department of Physics, National Central University, Taoyuan, Taiwan

* Presenter:Wei-Yen Woon, email:wywoon@phy.ncu.edu.tw

We demonstrate growth of graphene and boron nitride (BN) through plasma enhanced chemical vapor deposition (PECVD). Detailed analysis through image processing of scanning electron micrographs, optical emission, Raman, and x-ray photoelectron spectroscopies are performed to . Fully covered low defect graphene film can be grown in a radio frequency capacitively-coupled plasma chamber within 15 seconds. The enhanced growth rate can be attributed to effective gas phase dissociation of carbohydrate precursor via ion collision combined with surface dehydrogenation via substrate catalytic interactions, coupled with a surface bombardment-induced activation with an ion-track bending strategy through Lorentz force exerted by a parallel magnetic field setting. On the other hand, we show successful fast growth (~ 10 folds) of aligned monolayer hexagonal BN through an inductively-coupled plasma CVD (ICP-CVD). Compared to the purely thermal counterpart, the nucleation and growth dynamics of the PECVD process exhibit transition from edge limited to diffusion limited behavior. Furthermore, ICP-CVD also enable growth of thick amorphous/nanocrystalline BN on silicon at much lower growth temperature due to enhanced gas phase dissociation and formation of hexagonal B-N ring under the plasma activation.

Keywords: graphene, boron nitride, chemical vapor deposition, plasma, defect