Design of High-Performance RRAM through Interfacial Engineering Toward Neuromorphic Application by Low-Temperature Plasma Selenization Process
Mayur Chaudhary1*, Yu-Chuan Shih1, Shin-Yi Tang1, Yen-Kai Chen1, Yu-Lun Chueh1
1department of material and engineering, national tsinghua university, hsinchu, Taiwan
* Presenter:Mayur Chaudhary,
The probabilistic formation of conducting filament (CF) in two-terminal Resistive switches affects the device functionality. The spontaneity of formation of CF is the key factor in determining the device reliability and can be controlled by functional layer dynamics near the interface. This functional layer Here, we propose the interfacial engineering by inserting WO3/WSe2 layer between the electrolyte and the active electrode. In addition, inductively coupled plasma (ICP) process is used to change the WO3/WSe2 ratio to obtain the high-performance Resistive switch. The use of ICP process facilitates the synthesis of TMD at a temperature as low as 3000C. Therefore, the temperature required for TMDs synthesis is drastically reduced in comparison to conventional CVD process. The plasma synthesized WO3/ WSe2 is coupled with AL2O3 to form a hybrid structure for Resistive switching device. Compared with Pt/AL2O3/W device, the optimized Pt/Al2O3/WO3/WSe2/W hybrid structure show improvement in on/off ratio (104-105), multilevel characteristics (uniform LRS/HRS distribution) and retention (10years). The results indicates that plasma engineered interface engineering can be a promising approach for improved and high performance RRAMs.

Keywords: Selenization, RRAM, conducting filament