Mid-infrared light-emitting diodes based on black phosphorus
Tian-Yun Chang1*, Yueyang Chen2, De-In Luo1, Jia-Xin Li1, Po-Liang Chen1, Seokhyeong Lee2, Zhuoran Fang2, Wei-Qing Li1, Ya-Yun Zhang1, Mo Li2,3, Arka Majumdar2,3, Chang-Hua Liu1
1Institute of Photonics, National Tsing Hua University, Hsinchu, Taiwan
2Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington, USA
3Department of Physics, University of Washington, Seattle, Washington, USA
* Presenter:Tian-Yun Chang, email:au_zeus3200@hotmail.com
Many important molecules have strong absorption within the mid-infrared (MIR) spectral region, and this spectral region also contains two atmospheric windows (3-5 µm and 8-14 µm). As a result, developing MIR optoelectronics could be useful for environmental sensing, security and defense as well as biomedical applications. Currently, the widespread use of infrared light sources is mainly based on III–V/II–VI materials. However, these devices require the high cost and sophisticated epitaxial processes of growing materials. Here, we demonstrate a MIR light-emitting diode (LED), which is simply compose of graphene/black phosphorus/graphene van der Waals (vdW) heterostructures. Importantly, our device could show high quantum efficiency, long-term stability and fast modulation speed. Furthermore, we demonstrate our proposed vdW LED can be integrated with a silicon waveguide, useful for MIR silicon photonics.

Tian-Yun Chang, Yueyang Chen, De-In Luo, Jia-Xin Li, Po-Liang Chen, Seokhyeong Lee, Zhuoran Fang, Wei-Qing Li, Ya-Yun Zhang, Mo Li, Arka Majumdar, Chang-Hua Liu, “Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides”, Nano Letters, 20, 6824-6830 (2020)

Keywords: electroluminescence, black phosphorus, van der Waals heterostructure, mid-infrared