The resistive switching characteristics of Fullerene-based resistive switching memory devices

Pei-Fang Chung^1,2*, Mon-Shu Ho¹

¹Physics, National Chung Hsing University, Taichung, Taiwan
²Innovation and Development Center of Sustainable Agriculture (IDCSA), National Chung Hsing University, Taichung, Taiwan

* Presenter:Pei-Fang Chung, email:pfchung123@gmail.com

In comparison to other non-volatile memory devices, the performance of fullerene molecules could provide as new model of resistive memories devices. In this work, we fabricated Few layers of fullerene molecules (C₈₄) ultrathin film on Si (111)-7×7 and deposited 50nm thickness of Au on the C₈₄ molecular layer as Fullerene-based memory devices, Au/ C₈₄/Si(111)-7×7. The resistive switching mechanisms could be controlled not only by electron flow and identified through Conductive Atomic Force Microscope (C-AFM) but commercial probe station. We anticipated the resistance switching behavior of the memory devices were attributed to the formation and rupture of conductive filaments. Also, we have elucidated the local electron transport mechanism via sp² and sp³ bond switching in fullerene base memory devices. Furthermore, we studied the surface electric state and ferromagnetic magnetic performance through Ultra-High-Vacuum Scanning Tunneling Microscope (UHV-STM) and Magnetic Force Microscope (MFM) and we characterized the binding feature and the photoelectric properties with Raman, X-ray Photoelectron Spectroscopy (XPS) confirmed the composition of elements and boding features of fullerene molecules.

Keywords: Fullerene, Molecular, Molecular, resistive switching, ReRam