Fabrication of Large-Scale High Mobility Flexible Transparent Oxide Single Crystal Wafer

Yi-Cheng Chen^1*, Yu-Hao Tu¹, Li-Wei Chen¹, Min Yen¹, Ying-Hao Chu^1,2,3

¹Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
²Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
³Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu, Taiwan

* Presenter:Yi-Cheng Chen, email:j65ms22@gmail.com

Single crystal wafers, such as silicon, are the fundamental carriers of advanced electronic devices. However, these wafers exhibit rigidity without mechanical flexibility limiting their applications in flexible electronics. Here, we propose a new approach to fabricate 1.5-inch flexible functional zinc oxide (ZnO) single crystal wafers with high electron mobility (>100 cm² /Vs) and optical transparency (>80%) by a combination of thin-film deposition, chemical solution method, and surficial treatment. The uniformity of the flexible single crystal wafer is examined by advanced scanning X-ray diffraction technique and photoluminescence spectroscopy. The transport properties of ZnO flexible single crystal wafers retain their pristine states under various bending conditions, including cyclability and endurability. This approach demonstrates a breakthrough on the fabrication of the flexible single crystal wafer for future flexible applications.

Keywords: flexible wafer, single crystal, zinc oxide