Synthesis of High-Yield Janus Monolayer MoSSe

Lee Ling¹, Paul Albert Sino^2*, Feng-Chuan Chuang^2,4, Yu-Lun Chueh^1,2,3

¹Department of Material Science and Engineering, National Tsing-Hua University, Hsinchu City, Taiwan
²Department of Physics, National Sun Yat-sen University, Kaohsiung City, Taiwan
³Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing-Hua University, Hsinchu City, Taiwan
⁴Physics Division, National Center for Theoretical Sciences, Hsinchu, Taiwan

* Presenter:Paul Albert Sino, email:plsino@g-mail.nsysu.edu.tw

We report a top-down method for high-yield production of Janus monolayer MoSSe. In particular, we replace the top S atom with Se by controlled plasma-assisted selenization of monolayer MoS₂. Based on the Raman Spectroscopy results, all of the characterized monolayer MoS2 triangles are completely transformed to Janus MoSSe. The Janus structure of MoSSe is confirmed directly by means of high-resolution transmission electron microscopy (TEM) and energy-dependent X-ray photoelectron spectroscopy (XPS). Density Functional Theory (DFT) calculations are performed to determine the effect of the Se-concentration on the electronic properties of Janus MoSSe. Our method provides an avenue towards high-yield production and full exploration of Janus Transition Metal Dichalcogenides (TMDs).

Keywords: Janus MoSSe, Transition Metal Dichalcogenide , Plasma-assisted selenization, DFT